Device and methods for internal cooling of an integrated circuit (IC)

ABSTRACT

Device and methods are provided for an up-conversion energy internal cooling of electronic devices such as IC chips, which enable efficient cooling of high frequency rate, high power and density electronic devices. Up-conversion energy internal cooling IC chips are designed to provide uniform internal cooling with possibility of localized cooling capabilities for high frequency processing rate/high power density regions of IC chips. The design also includes external cooling of the IC chips, or theirs electronic components by an electromagnetic source.

CROSS REFERENCE TO RELATED PATENT APPLICATION

This application claims the benefit of U.S. Provisional Application Ser.No. 60/993,969 filed Sep. 17, 2007, entitled “ICs with internal coolingand application thereof”, which is incorporated by reference.

FIELD AND BACKGROUND OF THE INVENTION

The present invention relates to cooling of electronic components and,in particular, it concerns a system for the cooling of an integratedcircuit (IC).

SUMMARY OF THE INVENTION

A device and methods are provided for an up-conversion energy internalcooling of electronic devices such as IC chips, which enable efficientcooling of high frequency processing rate, high power and densityelectronic devices. Up-conversion energy internal cooling IC chips aredesigned to provide uniform internal cooling with possibility oflocalized cooling capabilities for “hot spots” regions of IC chips. Thedevice comprises at least one electronic component, an up-conversionmedium in which the electronic component is immersed, and a power supplyto drive the electronic component. The electronic component is design orselected to emit electromagnetic energy at a wavelength 1 when changesit's own charge, and the up-conversion medium is optimized or selectedto efficiently absorb electromagnetic energy at a wavelength 1 and toefficiently emit the absorbed energy at a wavelength 2, wherein quantumenergy of the wavelength 2 is higher than quantum energy of thewavelength 1 that leads to cooling the up-conversion medium andsubsequently to cooling the electronic component. In the design, theintensity of cooling electronic component is proportional to a frequencyrate of changing the charge in the electronic component. Therefore, theproposed invention addresses current existing problems with efficientcooling of high frequency processing rate, high power and densityelectronic devices. The design also includes an external up-conversioncooling of the IC chips, or theirs electronic components by furtherprovided an electromagnetic source in the device that irradiates at thewavelength 1.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is showing an electronic component immersed in an up-conversionmedium.

FIG. 2 is showing an electronic component with an up-conversion mediumembedded into the electronic component.

FIG. 3 is showing an electronic component with an electromagnetic energysource for external cooling of the electronic component, as providedaccording to some embodiments.

FIG. 4 is showing an electronic component with an embedded anelectromagnetic energy source into the electronic component, as providedaccording to some embodiments.

FIG. 5 describes principles of up-conversion energy cooling.

DESCRIPTION OF PREFERRED EMBODIMENTS

All patents, patent applications, and literatures cited or referenced inthis description are incorporated herein by reference in theirentireties. In the case of inconsistencies, the present disclosure,including definitions and usage, will control.

A device and methods are provided for an up-conversion energy internalcooling of electronic devices such as integrated circuit (IC) chips,which enable efficient cooling of high frequency processing rates, highpower and density electronic devices. The up-conversion energy internalcooling IC chips are designed to provide uniform internal cooling withpossibility of localized cooling capabilities for “hot spots” regions ofIC chips.

The device comprises at least one electronic component 101, anup-conversion medium 102 in which the electronic component is immersed(FIG. 1) or the medium 102 is embedded into the electronic component 101(FIG. 2), and a power supply 103 to drive charge changes in theelectronic component 101. The electronic component is design or selectedto emit most of it's electromagnetic energy at a wavelength 1 when theelectronic component changes or moves it's charge, and the up-conversionmedium is optimized or selected to efficiently absorb electromagneticenergy at a wavelength 1 and to efficiently emit the absorbed energy ata wavelength 2, wherein quantum energy of the wavelength 2 is higherthan quantum energy of the wavelength 1 (FIG. 5) that leads to coolingthe up-conversion medium and subsequently to cooling the electroniccomponent.

The changing or moving of the charge in the electronic component can bewithin the same type of the charge or within a plurality of charges. Forexample, in the electronic component 101 such as a capacitor, thecapacitor can be charged or discharged with a single electron or manyelectrons, or if the electronic component 101 is a quantum well, thequantum well can be charged or discharged by separation or recombinationof a positive charge (hole) and a negative charge (electron).

One of the embodiments of the inventions includes the use of a nonup-conversion material 105 (FIG. 1) embedded into the up-conversionmedium to enhance up-conversion or cooling capabilities of theup-conversion medium. For example of the non up-conversion material 105can be a metal nanoparticle, which will enhance up-conversioncapabilities of the up-conversion medium by increased absorption ofenergy at the wavelength 1 emitted by the electronic component.

In the design, the intensity of cooling electronic component isproportional to a frequency rate of changing the charge in theelectronic component. Therefore, the proposed invention answers currentexisting cooling problems in high frequency processing rate, high powerand density electronic devices.

The design also includes an external up-conversion cooling of the ICchips by an electromagnetic source 104 that irradiates the up-conversionmedium 102 at the wavelength 1 (FIG. 3) that leads to cooling theup-conversion medium 102 and subsequently to cooling the electroniccomponent 101. The electromagnetic source 104 may also be placed insideof the electronic component as is shown on FIG. 4, and the source 104can irradiate the medium embedded into the electromagnetic source 104leading to the internal cooling of the electronic component 101.

While the invention has been described in connection with what ispresently considered to be the most practical and preferred embodiments,it is to be understood that the invention is not to be limited to thedisclosed embodiments, but on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

1. An integrated circuit (IC) chip with internal up-conversion cooling comprises of: at least one electronic component, wherein the electronic component is capable to emit electromagnetic energy at a wavelength 1 during changing it's charge; an up-conversion medium surrounding the electronic component or embedded into the electronic component, the medium is capable to cool the electronic component by absorption of energy at the wavelength 1 emitted by the electronic component and then by emitting the absorbed energy at a wavelength 2, wherein quantum energy of the wavelength 2 is higher than quantum energy of the wavelength 1; and a power supply capable to change the charge in the electronic component.
 2. The IC chip claimed in claim 1, wherein the electronic component is selected from the group of: capacitor, transistor, diode, semiconductor diode, semiconductor transistor, charge couple cell, quantum well, or semiconductor multiple junction electronic component.
 3. The IC chip claimed in claim 1, wherein the up-conversion medium is a liquid, a gas-state material, or a solid-state material.
 4. The IC chip claimed in claim 1, wherein the up-conversion medium further contains a non up-conversion material to enhance up-conversion or cooling capabilities of the medium.
 5. The IC chip claimed in claim 1, wherein the IC chip further comprises of an electromagnetic source emitting energy at the wavelength
 1. 6. The IC chip claimed in claim 1, wherein changing of the charge in the electronic component is within a single type of the charge or within a plurality types of the charges.
 7. The IC chip claimed in claim 1, wherein the wavelength 1 or the wavelength 2 is selected within a range of 1 nanometer to 20,000 nm.
 8. The IC chip claimed in claim 1, wherein the wavelength 1 or the wavelength 2 is a single wavelength band or a plurality wavelength band.
 9. The method for internal cooling of IC chips comprises steps of: providing at least one electronic component with a power supply capable to change a charge in the electronic component, wherein the electronic component is capable of to emit electromagnetic energy at a wavelength 1 when is changing it's charge; providing an up-conversion medium, the medium is capable to cool the electronic component by absorption of energy at the wavelength 1 emitted by the electronic component and by emitting the absorbed energy at a wavelength 2, wherein quantum energy of the wavelength 2 is higher than quantum energy of the wavelength 1; surrounding or embedding the medium into the electronic component; and changing the charge in the electronic component by the power supply.
 10. The method of claim 9, wherein the electronic component is selected from the group of: capacitor, transistor, diode, semiconductor diode, semiconductor transistor, charge couple cell, quantum well, or semiconductor multiple junction electronic component.
 11. The method of claim 9, wherein the up-conversion medium is a liquid, a gas-state material, or a solid-state material.
 12. The method of claim 9, wherein the up-conversion medium further contains a non up-conversion material to enhance up-conversion or cooling capabilities of the medium.
 13. The method of claim 9, wherein the wavelength 1 or the wavelength 2 is selected within a range of 1 nanometer to 20,000 nm.
 14. The method of claim 9, wherein the wavelength 1 or the wavelength 2 is a single wavelength band or a plurality wavelength band.
 15. The method of claim 9, wherein the method is further supported with steps of: providing an electromagnetic source emitting energy at the wavelength 1; and irradiating the up-conversion medium by the electromagnetic source to cool the medium.
 16. The method of claim 9, wherein changing of the charge in the electronic component is within a single type of the charge or within a plurality types of the charges. 